MIS switching circuit capable of enduring high voltage
High-voltage circuit for insulated gate field-effect transistor
Switched-capacitor conductance-control of variable transconductance elements
High voltage circuits in low voltage CMOS process
Reduction of gate oxide breakdown for booted nodes in MOS integrated circuits
Floating node stabilizing circuit for a switched-capacitor circuit and filter
Switched capacitor filter utilizing a differential input and output circuit Patent #: 4633425
ApplicationNo. 06/930869 filed on 11/14/1986
US Classes:327/546, With field-effect transistor327/541, With field-effect transistor327/560, Nonlinear amplifying circuit327/576, Complementary transistors330/253Having field effect transistor
ExaminersPrimary: Miller, Stanley D.
Assistant: Hudspeth, D. R.
Attorney, Agent or Firm
International ClassesH03K 17/081 (20060101)
H03K 17/08 (20060101)
H03K 17/10 (20060101)
H03F 1/52 (20060101)
AbstractA circuit for controlling drain-to-source voltage in an MOS transistor. A second MOS transistor is located in series with the first transistor. The gate voltage of the second transistor is such that the drain-to-source voltages of both transistors are substantially equal.