Dry etching patterning of electrical and optical materials
Patent 4734152 Issued on March 29, 1988. Estimated Expiration Date: 
July 13, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 13, 2007. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesDry etching method Surface treatment apparatus Low defect etching of patterns using plasma-stencil mask Patent #: 4661203 InventorsApplicationNo. 07/073905 filed on 07/13/1987US Classes:216/45, Mask is reusable (i.e., stencil)156/345.33, With gas inlet structure (e.g., inlet nozzle, gas distributor)156/345.37, With heating or cooling means for apparatus part other than workpiece support204/192.32, Sputter etching204/298.36, Beam or directed flux etching (e.g., ion beam, etc.)216/51, Mask resist contains inorganic material216/62, Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant257/E21.218, Plasma etching; reactive-ion etching (EPO)257/E21.222, Vapor phase etching (EPO)257/E21.231, Using mask (EPO)257/E21.252, By dry-etching (EPO)257/E21.256, By dry-etching (EPO)257/E21.31, By vapor etching only (EPO)257/E21.311, Using plasma (EPO)257/E21.485Chemical or electrical treatment, e.g., electrolytic etching (EPO)ExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesH01L 21/306 (20060101)H01L 21/465 (20060101) H01L 21/02 (20060101) H01L 21/3213 (20060101) H01L 21/308 (20060101) H01L 21/311 (20060101) H01L 21/3065 (20060101) AbstractA new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiNx wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl2, F3, Br2 or SF6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.Other References
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