Dry etching method
Surface treatment apparatus
Low defect etching of patterns using plasma-stencil mask Patent #: 4661203
ApplicationNo. 07/073905 filed on 07/13/1987
US Classes:216/45, Mask is reusable (i.e., stencil)156/345.33, With gas inlet structure (e.g., inlet nozzle, gas distributor)156/345.37, With heating or cooling means for apparatus part other than workpiece support204/192.32, Sputter etching204/298.36, Beam or directed flux etching (e.g., ion beam, etc.)216/51, Mask resist contains inorganic material216/62, Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant257/E21.218, Plasma etching; reactive-ion etching (EPO)257/E21.222, Vapor phase etching (EPO)257/E21.231, Using mask (EPO)257/E21.252, By dry-etching (EPO)257/E21.256, By dry-etching (EPO)257/E21.31, By vapor etching only (EPO)257/E21.311, Using plasma (EPO)257/E21.485Chemical or electrical treatment, e.g., electrolytic etching (EPO)
ExaminersPrimary: Powell, William A.
Attorney, Agent or Firm
International ClassesH01L 21/306 (20060101)
H01L 21/465 (20060101)
H01L 21/02 (20060101)
H01L 21/3213 (20060101)
H01L 21/308 (20060101)
H01L 21/311 (20060101)
H01L 21/3065 (20060101)
AbstractA new anisotropic dry etching system using a hot jet tube to heat and dissociate non-reactive source gas to form a directed flux of reactive specie or radicals for etching materials through openings in a resist or a reusable stencil of SiNx wherein x is in the range of 1.5 to 0.5. Si and GaAs may be etched using Cl2, F3, Br2 or SF6 source gasses. Pb or Hg, Cd, Te may be etched using n-butane, dimethyl ether or acetone as a source gas for CH3 radicals. The tube may be formed of tungsten or where fluorine is used as a source gas, an irridium tube is preferred. Alternatively, a tube formed of rhenium or an alloy of rhenium and tungsten is preferred for some applications.