Magnetoresistive memory including thin film storage cells having tapered ends
Patent 4731757 Issued on March 15, 1988. Estimated Expiration Date: 
June 27, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 27, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3117885 3218616 3432832 3466636 3493943 3531780 3576552 3798623 3883858 Reading unit for a magnetic domain propagation register on a thin layer InventorsAssigneeApplicationNo. 06/879679 filed on 06/27/1986US Classes:365/173, Multiple magnetic storage layers365/158MagnetoresistiveExaminersPrimary: Moffitt, James W.Attorney, Agent or FirmInternational ClassesG11C 11/02 (20060101)G11C 11/15 (20060101) AbstractA digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof.Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.Other References
Field of SearchMagnetoresistive | |
