Reading unit for a magnetic domain propagation register on a thin layer
ApplicationNo. 06/879679 filed on 06/27/1986
US Classes:365/173, Multiple magnetic storage layers365/158Magnetoresistive
ExaminersPrimary: Moffitt, James W.
Attorney, Agent or Firm
International ClassesG11C 11/02 (20060101)
G11C 11/15 (20060101)
AbstractA digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof.Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.
Field of SearchMagnetoresistive