Random access memory cell resistant to inadvertant change of state due to charged particles
Patent 4725981 Issued on February 16, 1988. Estimated Expiration Date: 
February 3, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 3, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesRadiation hard memory cell and array thereof Patent #: 4130892 InventorAssigneeApplicationNo. 06/825430 filed on 02/03/1986US Classes:365/154, Flip-flop (electrical)365/190For complementary informationExaminersPrimary: Moffitt, James W.Attorney, Agent or FirmInternational ClassG11C 11/412 (20060101)AbstractA static MOS RAM cell is provided that is resistant to inadvertent change of state due to charged particles striking the cell without decreasing write time. First and second cross-coupled transistors are coupled between first and second nodes, respectively, and a first voltage. First and second loads are coupled between the first and second nodes, respectively, and a second voltage. A first coupling transistor is coupled between the first node and a first input terminal, and has a gate coupled for receiving a write signal. A second coupling transistor is coupled between the second node and a second input terminal, and has a gate coupled for receiving the write signal. First and second variable loads are coupled between the first node and a gate of the second latching transistor, and the second node and a gate of the first latching transistor, respectively, for providing a resistance in the standby mode and relatively no resistance in the write mode. | |
