Vertical semiconductor processor
Method of controlling deposition amount distribution in a vacuum deposition plating Patent #: 4612206
ApplicationNo. 06/819435 filed on 01/16/1986
US Classes:118/718, Running length work118/50.1, With means to apply electrical and/or radiant energy to work and/or coating material118/719, Multizone chamber118/723AN, Having antenna118/723E, Having glow discharge electrodes (e.g., DC, AC, RF, etc.)118/723MW, Microwave gas energizing means (e.g., 2.45 gigahertz, microwave plasma, etc.)118/900, SEMICONDUCTOR VAPOR DOPING136/258Polycrystalline or amorphous semiconductor
ExaminersPrimary: Lawrence, Evan K.
Attorney, Agent or Firm
International ClassesC23C 16/54 (20060101)
H01L 21/00 (20060101)
AbstractA passageway which includes an annular region, the passageway adapted to isolate the gaseous contents of one of a pair of adjacent, vacuumized environments from the other of the pair while providing for the movement of a substrate therebetween.