Isolation passageway including annular region
Patent 4723507 Issued on February 9, 1988. Estimated Expiration Date: 
January 16, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
January 16, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 2925062 2971862 Vertical semiconductor processor Method of controlling deposition amount distribution in a vacuum deposition plating Patent #: 4612206 InventorsAssigneeApplicationNo. 06/819435 filed on 01/16/1986US Classes:118/718, Running length work118/50.1, With means to apply electrical and/or radiant energy to work and/or coating material118/719, Multizone chamber118/723AN, Having antenna118/723E, Having glow discharge electrodes (e.g., DC, AC, RF, etc.)118/723MW, Microwave gas energizing means (e.g., 2.45 gigahertz, microwave plasma, etc.)118/900, SEMICONDUCTOR VAPOR DOPING136/258Polycrystalline or amorphous semiconductorExaminersPrimary: Lawrence, Evan K.Attorney, Agent or FirmInternational ClassesC23C 16/54 (20060101)H01L 21/00 (20060101) AbstractA passageway which includes an annular region, the passageway adapted to isolate the gaseous contents of one of a pair of adjacent, vacuumized environments from the other of the pair while providing for the movement of a substrate therebetween. | |
