Heterojunction p-i-n photovoltaic cell

Patent 4710589 Issued on December 1, 1987. Estimated Expiration Date:

October 21, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

3290175

Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
Patent #: 4035197
Issued on: 07/12/1977
Inventor: Raychaudhuri

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Inventors

Assignee

Ametek, Inc.

Application

No. 06/922122 filed on 10/21/1986

US Classes:

136/258, Polycrystalline or amorphous semiconductor136/255, Schottky, graded doping, plural junction or special junction geometry136/260, Cadmium containing136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing257/184, Light responsive structure257/458PIN detector, including combinations with non-light responsive active devices

Examiners

Primary: Weisstuch, Aaron

Attorney, Agent or Firm

Amster, Rothstein & Ebenstein

International Classes

H01L 31/18 (20060101)
H01L 31/06 (20060101)
H01L 31/072 (20060101)
H01L 31/075 (20060101)

Abstract

A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer, a high resistivity intrinsic semiconductor layer, used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer. The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First and second ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively.

Other References

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