Process for fabricating thin film photovoltaic solar cells
Patent 4709466 Issued on December 1, 1987. Estimated Expiration Date: 
April 15, 2005. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 15, 2005. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsAssigneeApplicationNo. 06/723054 filed on 04/15/1985US Classes:438/94, Heterojunction136/260, Cadmium containing136/264, Selenium or tellurium containing427/76, Coating is selenium, tellurium, or compound thereof438/603, II-VI compound semiconductor438/796, Compound semiconductor438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing438/98Contact formation (i.e., metallization)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 31/18 (20060101)H01L 31/06 (20060101) H01L 31/072 (20060101) AbstractThin film photovoltaic solar cells are made by forming the cell structure from a number of layers including the contact layers and semiconductor layers. At least one of the semiconductor layers is a tellurium containing II-VI compound. After the structure is formed, it is heated to temperatures above 300° C. and then rapidly cooled at rates greater than 10° C./s. Cells comprising CdS and CdTe have increased fill factor when the fabrication process includes heating and rapid cooling.Other References
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