Method of coating semiconductor substrates
Deposition of silicon nitride
High pressure chemical vapor deposition Patent #: 4404236
ApplicationNo. 06/797881 filed on 11/14/1985
US Classes:428/337, Of base or substrate427/255.17, Halogen containing coating, reactant, or precursor427/255.18, Silicon containing coating427/255.393, Silicon containing coating428/446, Of silicon containing (not as silicon alloy)438/791Silicon nitride formation
ExaminersPrimary: Childs, Sadie L.
Attorney, Agent or Firm
International ClassC23C 16/34 (20060101)
Foreign Application Priority Data1984-11-14 JP
AbstractIn forming a silicon nitride film by the low-pressure CVD method using a silane gas and ammonia, the reaction pressure is set to lie over a range of from about 0.05 to about 0.25 Torr, enabling a silicon nitride film to be formed, of uniform thickness, highly efficiently even on large wafers, and maintaining high yield, improved uniformity and good quality as a whole without decreasing the film-forming efficiency. Preferably, the reaction pressure is maintained over a range of from 0.1 to 0.2 Torr to further increase the efficiency, while preferably maintaining the temperature over a range of from 700° to 1000° C.