GAAS semiconductor device
Patent 4695869 Issued on September 22, 1987. Estimated Expiration Date: 
July 7, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 7, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.InventorsApplicationNo. 06/883011 filed on 07/07/1986US Classes:257/745, Contact for III-V material257/743, For compound semiconductor material257/751, At least one layer forms a diffusion barrier257/763, At least one layer of molybdenum, titanium, or tungsten257/E23.019, Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (EPO)257/E23.16, Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO)257/E29.144On Group III-V material (EPO)ExaminersPrimary: Edlow, Martin H.Assistant: Clark, S. V. Attorney, Agent or FirmInternational ClassesH01L 23/48 (20060101)H01L 29/40 (20060101) H01L 23/52 (20060101) H01L 23/485 (20060101) H01L 29/45 (20060101) H01L 23/532 (20060101) Foreign Application Priority Data1983-05-31 JPAbstractA GaAs semiconductor device, includes a p-type GaAs substrate, an n-type region formed in the surface area of the substrate, an ohmic contact electrode formed in ohmic contact with the n+ -type region and having a layer of alloy of gold, and an interconnection electrode formed on the ohmic contact electrode and including an upper layer of aluminum and a lower layer of a metal which prevents gold from passing through it. The interconnection electrode is formed such that it covers the top and side surfaces of the ohmic contact electrode.Other References
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