U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Pattern delineation of vertical load resistor

Patent 4690728 Issued on September 1, 1987. Estimated Expiration Date: Icon_subject October 23, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3900944

Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer
Patent #: 4208781
Issued on: 06/24/1980
Inventor: Rao ,   et al.

Method of restoring semiconductor device performance
Patent #: 4341594
Issued on: 07/27/1982
Inventor: Carlson ,   et al.

Method of plasma etching of films containing chromium Patent #: 4445966
Issued on: 05/01/1984
Inventor: Carlson ,   et al.

Inventors

Application

No. 06/922289 filed on 10/23/1986

US Classes:

438/384, Deposited thin film resistor204/192.32, Sputter etching216/16, Forming or treating resistive material257/537, Using specific resistive material257/E21.004, Of resistor (EPO)257/E21.251, By chemical means (EPO)257/E21.252, By dry-etching (EPO)257/E27.101, Load element being a resistor (EPO)29/610.1, Resistor making29/620, Coating resistive material on a base338/308, Resistance element coated on base427/103, Applying superposed diverse coatings or coating a coated base438/653, At least one layer forms a diffusion barrier438/704Having liquid and vapor etching steps

Examiners

Primary: Powell, William A.

Attorney, Agent or Firm

International Classes

H01L 21/02 (20060101)
H01L 21/311 (20060101)
H01L 27/11 (20060101)

Abstract

A process for delineating a vertical resistor on a semiconductor device is disclosed. Resistive and diffusion barrier layers are deposited and then etched, first by dry plasma and then by wet bath. The two step etching allows complete removal of the deposited layers with minimal damage to exposed dielectric, silicide, polysilicon or doped regions on the semiconductor.

Other References

  • Ghandhi, "VLSI Fabrication Principles", A Wiley-Interscience Publication 1983, pp. 427-429
  • Adams, "VLSI Technology", 1983, McGraw Hill, pp. 120-123
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