U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Multilayer ohmic contact for p-type semiconductor and method of making same

Patent 4680611 Issued on July 14, 1987. Estimated Expiration Date: Icon_subject December 28, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3268309

3370207

3465428

Ohmic contacts to p-type mercury cadmium telluride
Patent #: 4000508
Issued on: 12/28/1976
Inventor: Hager ,   et al.

Insulated-gate thin film transistor with low leakage current
Patent #: 4065781
Issued on: 12/27/1977
Inventor: Gutknecht

Ohmic contacts to p-type mercury cadmium telluride
Patent #: 4085500
Issued on: 04/25/1978
Inventor: Hager, et al.

Thin film heterojunction photovoltaic cells and methods of making the same
Patent #: 4388483
Issued on: 06/14/1983
Inventor: Basol ,   et al.

Method of forming ohmic contacts Patent #: 4456630
Issued on: 06/26/1984
Inventor: Basol

Inventor

Assignee

Application

No. 06/687092 filed on 12/28/1984

US Classes:

136/256, Contact, coating, or surface geometry136/260, Cadmium containing257/762, At least one layer containing silver or copper257/766, At least one layer containing chromium or nickel257/E21.478, From gas or vapor, e.g., condensation (EPO)257/E21.479, From liquid, e.g., electrolytic deposition (EPO)257/E29.143Ohmic electrodes (EPO)

Examiners

Primary: James, Andrew J.
Assistant: Mintel, William

Attorney, Agent or Firm

International Classes

H01L 21/02 (20060101)
H01L 29/40 (20060101)
H01L 21/443 (20060101)
H01L 21/445 (20060101)
H01L 29/45 (20060101)

Abstract

Novel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method for forming such novel ohmic contacts. These ohmic contacts comprise a multilayer metal contact wherein the first layer provides a lasting stable contact with the p-type semiconductor; the additional layers provide the necessary electrical conductivity for the contact to be efficient.

Other References

  • Boer et al., "P-Type Photoelectric Behavior in CdS Dominated by a High-Resistivity Regin near the Anode," Physical Review, vol. 154, No. 3, Feb. 67, pp. 757-762
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