Patent References 3268309 3370207 3465428 Ohmic contacts to p-type mercury cadmium telluride Insulated-gate thin film transistor with low leakage current Ohmic contacts to p-type mercury cadmium telluride Thin film heterojunction photovoltaic cells and methods of making the same Method of forming ohmic contacts Patent #: 4456630 InventorAssigneeApplicationNo. 06/687092 filed on 12/28/1984US Classes:136/256, Contact, coating, or surface geometry136/260, Cadmium containing257/762, At least one layer containing silver or copper257/766, At least one layer containing chromium or nickel257/E21.478, From gas or vapor, e.g., condensation (EPO)257/E21.479, From liquid, e.g., electrolytic deposition (EPO)257/E29.143Ohmic electrodes (EPO)ExaminersPrimary: James, Andrew J.Assistant: Mintel, William Attorney, Agent or FirmInternational ClassesH01L 21/02 (20060101)H01L 29/40 (20060101) H01L 21/443 (20060101) H01L 21/445 (20060101) H01L 29/45 (20060101) AbstractNovel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method for forming such novel ohmic contacts. These ohmic contacts comprise a multilayer metal contact wherein the first layer provides a lasting stable contact with the p-type semiconductor; the additional layers provide the necessary electrical conductivity for the contact to be efficient.Other References
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