Solid state imaging device
Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
Light and particle image intensifier
Photosensor array wherein each photosensor comprises a plurality of amorphous silicon p-i-n diodes Patent #: 4482804
ApplicationNo. 06/678105 filed on 12/04/1984
US Classes:378/98.8, With solid-state image detector250/370.09, X-ray or gamma-ray system250/370.11, Scintillation system257/E27.141, Imager using a photoconductor layer (e.g., single photoconductor layer for all pixels) (EPO)257/E27.147, Contact-type imager (e.g., contacts document surface) (EPO)348/309, Exclusively passive light responsive elements in the matrix378/98.2Televison
ExaminersPrimary: Rubinson, Gene Z.
Assistant: Brinich, Stephen
Attorney, Agent or Firm
International ClassesH04N 1/028 (20060101)
H01L 27/146 (20060101)
AbstractAn apparatus for providing electrical signals representative of an image formed by X-rays projected thereon includes a two-dimensional array of spaced apart light sensitive sensors formed from deposited semiconductor material. The elements are capable of effecting a detectable electrical characteristic responsive to the intensity of light received thereon. A phosphorescent layer overlying the light sensitive elements receives the projected X-ray image and produces light in response to the impingement of the X-rays thereon. Isolation elements enable the selective addressing of the light sensitive elements. A method of converting an image from electromagnetic energy to a plurality of electrical signals is also disclosed.