ApplicationNo. 06/738188 filed on 05/28/1985
US Classes:257/142, Having impurity doping for gain reduction257/144, Cathode emitter or cathode electrode feature257/212, CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR)257/E29.013, With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with PN or Schottky junction) (EPO)257/E29.027, Surface layout of MOS gated device (e.g., DMOSFET or IGBT) (EPO)257/E29.066, Body region structure of IGFET's with channel containing layer (DMOSFET or IGBT) (EPO)257/E29.197, Insulated gate bipolar mode transistor (e.g., IGBT; IGT; COMFET) (EPO)257/E29.198Transistor with vertical current flow (EPO)
ExaminersPrimary: Edlow, Martin H.
Assistant: Crane, Sara W.
Attorney, Agent or Firm
International ClassesH01L 29/66 (20060101)
H01L 29/02 (20060101)
H01L 29/739 (20060101)
H01L 29/06 (20060101)
H01L 29/10 (20060101)
Foreign Application Priority Data1984-05-30 JP
AbstractA conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type formed in the semiconductor layer, a source layer of the second conductivity type formed in the base layer, a gate electrode formed on a gate insulating film which is formed on a channel region, the channel region being formed in a surface of the base layer between the semiconductor layer and the source layer, a source electrode ohmic-contacting the source layer and the base layer, and a drain electrode formed on the surface of the semiconductor substrate opposite to the semiconductor layer, characterized in that the conductivity modulated MOSFET has a saturation current smaller than a latch-up current when a predetermined gate voltage is applied to the gate electrode.