U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Surface acoustic wave devices and method of manufacture thereof

Patent 4672254 Issued on June 9, 1987. Estimated Expiration Date: Icon_subject October 11, 2005. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Frequency trimming of surface acoustic wave devices
Patent #: 4278492
Issued on: 07/14/1981
Inventor: Cross ,   et al.

Method and apparatus for depositing a material on a surface
Patent #: 4340617
Issued on: 07/20/1982
Inventor: Deutsch ,   et al.

Frequency trimming of saw resonators Patent #: 4442574
Issued on: 04/17/1984
Inventor: Wanuga ,   et al.

Inventors

Application

No. 06/786585 filed on 10/11/1985

US Classes:

310/313R, Surface acoustic wave devices216/17, Forming or treating of groove or through hole216/58, GAS PHASE ETCHING OF SUBSTRATE219/121.69, Methods219/121.85, Method29/25.35, PIEZOELECTRIC DEVICE MAKING310/313D, Grating or reflector in wave path310/318, Input circuit for electrical output from piezoelectric element333/193, Using surface acoustic waves367/157, Piezoelectric427/586Pyrolytic use of laser or focused light (e.g., IR, UV lasers to heat, etc.)

Examiners

Primary: Powell, William A.

Attorney, Agent or Firm

International Classes

H03H 9/02 (20060101)
H03H 3/08 (20060101)
H03H 3/00 (20060101)

Abstract

A phase and amplitude compensated surface acoustic wave (SAW) structure is described in which computer controlled compensation is achieved by laser chemical etching of selective portions of a compound chemical film deposited on the surface of a piezoelectric SAW substrate in the path of propagation. The compound film comprises a layer of amplitude attenuating cermet material formed on the substrate and a phase compensating layer of molybdenum formed over the cermet material and in contact with the substrate surface.

Other References

  • "Automated Pulsed Technique for Measuring Phase and Amplitude Response of SAW Devices", J. H. Holtham & R. C. Williamson, IEEE 1978
  • "L-Band Reflective-Array Compressor with a Compression Ratio of 5120", R. C. Williamson, V. S. Dolat & Henry I. Smith, 1973 Ultrasonics Symposium Proc. 1973
  • "Surface Acoustic-Wave Devices", McGraw-Hill Encyclopedia of Electronics and Computers, 1984, pp. 793-796
  • "Attenuating Thin Films for SAW Devices", A. C. Anderson, V. S. Dolat, & W. T. Brogan, IEEE 1980 Ultrasonics Symposium
  • "Laser Direct Writing for VLSI", D. J. Erlich & J. Y. Tsao, VLSI Electronics: Microstructure Science, vol. 7, 1983
  • "Laser Chemical Technique for Rapid Direct Writing of Surface Relief in Silicon", D. J. Ehrlich, R. M. Osgood, Jr., & T. F. Deutsch, Appl. Phys. Lett. 38(12), Jun. 1981, American Inst. of Physics
  • "Nonreciprocal Laser-Microchemical Processing: Spatial Resolution Limits and Demonstration of 0.2-μm Linewidths", D. J. Ehrlich & J. Y. Tsao, Appl. Phys. Lett. 44(2), Jan. 1984, American Inst. of Physics
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