Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
Patent 4666569 Issued on May 19, 1987. Estimated Expiration Date: 
June 2, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 2, 2006. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3268309 3370207 3465428 Ohmic contacts to p-type mercury cadmium telluride Insulated-gate thin film transistor with low leakage current Ohmic contacts to p-type mercury cadmium telluride Thin film heterojunction photovoltaic cells and methods of making the same Method of forming ohmic contacts Cadmium sulphide solar cell Patent #: 4463215 InventorAssigneeApplicationNo. 06/869545 filed on 06/02/1986US Classes:438/603, II-VI compound semiconductor136/256, Contact, coating, or surface geometry136/260, Cadmium containing136/264, Selenium or tellurium containing205/157, Coating predominantly semiconductor substrate (e.g., silicon, compound semiconductor, etc.)257/E21.478, From gas or vapor, e.g., condensation (EPO)257/E21.479, From liquid, e.g., electrolytic deposition (EPO)257/E29.143, Ohmic electrodes (EPO)438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing438/98Contact formation (i.e., metallization)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 29/40 (20060101)H01L 21/02 (20060101) H01L 21/443 (20060101) H01L 21/445 (20060101) H01L 29/45 (20060101) AbstractA method of making an ohmic content to a thin film of a II-VI compound semiconductor. The contact is made by etching the film with an acidic solution and thereafter treating the etched surface with an alkaline solution. A layer of copper 5 to 50 angstroms thick is deposited on the etched and treated surface and covered by a different metal. The contact may be heat treated to improve its performance.Other References
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