Method of fabricating a charged couple radiation sensing device
Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device
Photo electro transducer device Patent #: 4565928
ApplicationNo. 06/801932 filed on 11/26/1985
US Classes:430/314, Etching of substrate and material deposition257/E27.133, Photodiode array or MOS imager (EPO)257/E27.141, Imager using a photoconductor layer (e.g., single photoconductor layer for all pixels) (EPO)257/E31.125, For device having potential or surface barrier (EPO)257/E31.126, Transparent conductive layer (e.g., transparent conductive oxide (TCO), indium tin oxide (ITO) layer) (EPO)430/316, Multiple etching of substrate430/318, Metal etched430/319, Named electrical device430/330, Including heating438/73, Making electromagnetic responsive array438/750, To same side of substrate438/754, Electrically conductive material (e.g., metal, conductive oxide, etc.)438/96, Amorphous semiconductor438/98Contact formation (i.e., metallization)
ExaminersPrimary: Kittle, John E.
Assistant: Dees, Jose G.
Attorney, Agent or Firm
International ClassesH01L 27/146 (20060101)
H01L 31/0224 (20060101)
Foreign Application Priority Data1984-11-26 JP
AbstractA method is provided for fabricating thin film amorphous silicon p-i-n photodiode array image sensors that have transparent photodiode electrodes made of indium tin oxide or SnO2 and thin-film aluminum conductors for connecting the transparent electrodes to signal processing circuitry. The method provides for patterning of the aluminum conductors without eroding the material of the transparent electrodes through reduction of such material by hydrogen gas released during etching of the aluminum by using a photoresist etch mask that covers the areas of the transparent electrodes and defines the pattern of the aluminum conductors.