CuInSe2 thin film solar cell with thin CdS and transparent window layer
Patent 4611091 Issued on September 9, 1986. Estimated Expiration Date: 
December 6, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 6, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod to synthesize and produce thin films by spray pyrolysis Patent #: 4327119 InventorsAssigneeApplicationNo. 06/678854 filed on 12/06/1984US Classes:136/260, Cadmium containing136/256, Contact, coating, or surface geometry136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing257/43, SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE257/431, Light257/E31.006, Comprising only Cu 2 X/CdX heterojunction and X being Group VI element (EPO)257/E31.007, Comprising only heterojunction including Group I-III-VI compound (e.g., CdS/CuInSe 2 heterojunction) (EPO)257/E31.126Transparent conductive layer (e.g., transparent conductive oxide (TCO), indium tin oxide (ITO) layer) (EPO)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 31/06 (20060101)H01L 31/072 (20060101) H01L 31/0264 (20060101) H01L 31/0336 (20060101) H01L 31/0224 (20060101) AbstractA thin film photovoltaic device having first layer of copper indium selenide, a second layer of cadmium sulfide having a thickness less than 2500 angstroms, and a third layer of conducting wide bandgap semiconductor such as zinc oxide. The transparent third layer allows good transmission of blue light to the junction region while fully depleting the junction area to improve device voltage.Other References
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