Patent ReferencesFine-grain semiconducting ceramic compositions Dielectric ceramic materials with insulated boundaries between crystal grains, and process for preparation Low voltage ceramic varistor Semiconductive ceramic materials with a voltage-dependent nonlinear resistance, and process for preparation Patent #: 4438214 InventorsApplicationNo. 06/753836 filed on 07/11/1985US Classes:29/610.1, Resistor making252/519.12, Titanium containing29/612Thermally variableExaminersPrimary: Barr, JosephineAttorney, Agent or FirmInternational ClassesH01C 7/105 (20060101)H01C 7/115 (20060101) Foreign Application Priority Data1981-05-29 DEAbstractA non-linear resistor having an operational field strength which optionally is formed as a VDR- or as an NTC-resistor having a ceramic sintered body on the basis of a polycrystalline alkaline earth metal titanate doped with a small quantity of a metal oxide so as to produce an N-type conductivity, in which the sintered body comprises at its grain boundaries insulating layers formed by re-oxidation of the sintered body and consists of an alkaline earth metal titanate having a Perowskite structure of the general formulawherein: A=alkaline earth metal; Ln=rare earth metal; Me=metal having a valency of 5 or more; 0.0005<x<solubility limit in the Perowskite phase; y=0.001 to 0.02. The sintered body becomes adjustable in its non-linear resistance variation by selection of the re-oxidation temperature and of the re-oxidation duration in such manner that an initially present NTC-characteristic gradually is observable only at ever increasing temperatures and changes into a VDR-characteristic in the range of the operating temperature of the resistor. FIG. 1. | |