Reactive ion etching process
Patent 4601782 Issued on July 22, 1986. Estimated Expiration Date: 
June 20, 2005. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 20, 2005. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for plasma etching CMOS Process with unique plasma etching step Patent #: 4447290 InventorsApplicationNo. 06/747156 filed on 06/20/1985US Classes:216/72, Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate216/48, Mask is exposed to nonimaging radiation216/66, Using ion beam, ultraviolet, or visible light252/79.1, ETCHING OR BRIGHTENING COMPOSITIONS257/E21.252By dry-etching (EPO)ExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesC04B 41/53 (20060101)C04B 41/91 (20060101) H01L 21/02 (20060101) H01L 21/311 (20060101) AbstractIn a process for etching by reactive ion etching, a ceramic partially masked by an organic photoresist, an etch gas containing SF6, a noble gas and a small percentage of a carbon-containing gas is used. | |
