Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
Patent 4596645 Issued on June 24, 1986. Estimated Expiration Date: 
October 23, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 23, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3522164 Volatilization and deposition of a semi-conductor substance and a metallic doping impurity Electrophotographic film, method of making the same and photoconductive coating used therewith Photoelectric conversion semiconductor manufacturing method Method of forming a dielectric layer comprising a gettering material Patent #: 4515668 InventorAssigneeApplicationNo. 06/663768 filed on 10/23/1984US Classes:204/192.25, Semiconductor136/260, Cadmium containing136/264, Selenium or tellurium containing136/265, Copper, lead, or zinc containing427/573, With heated substrate438/925, Fluid growth doping control (e.g., delta doping, etc.)438/94, Heterojunction438/95Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containingExaminersPrimary: Niebling, John F.Assistant: Chapman, Terryence Attorney, Agent or FirmInternational ClassesC23C 14/35 (20060101)C23C 14/06 (20060101) AbstractA high conductivity, n-doped semiconductor film is produced from zinc, or Zn and Cd, and group VI elements selected from Se, S and Te in a reactive magnetron sputtering system having a chamber with one or two targets, a substrate holder, means for heating the substrate holder, and an electric field for ionizing gases in the chamber. Zinc or a compound of Zn and Cd is placed in the position of one of the two targets and doping material in the position of the other of the two targets. Zn and Cd may be placed in separate targets while a dopant is placed in the third target. Another possibility is to place an alloy of Zn and dopant, or Zn, Cd and dopant in one target, thus using only one target. A flow of the inert gas is ionized and directed toward said targets, while a flow of a reactant gas consisting of hydrides of the group VI elements is directed toward a substrate on the holder. The targets are biased to attract negatively ionized inert gas. The desired stochiometry for high conductivity is achieved by controlling the temperature of the substrate, and partial pressures of the gases, and the target power and total pressure of the gases in the chamber.Other References
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