U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Thin-film photovoltaic devices incorporating current collector grid and method of making

Patent 4595791 Issued on June 17, 1986. Estimated Expiration Date: Icon_subject January 29, 2005. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3431150

Cadmium sulfide photovoltaic cell and method of fabrication
Patent #: 4143235
Issued on: 03/06/1979
Inventor: Duisman

Photovoltaic cell
Patent #: 4159914
Issued on: 07/03/1979
Inventor: Jordan ,   et al.

Photo-voltaic power generating means and methods
Patent #: 4400244
Issued on: 08/23/1983
Inventor: Kroger ,   et al.

Gridded thin film solar cell Patent #: 4542255
Issued on: 09/17/1985
Inventor: Tanner ,   et al.

Inventors

Assignee

Application

No. 06/696149 filed on 01/29/1985

US Classes:

136/256, Contact, coating, or surface geometry136/260, Cadmium containing205/162, Ceramic or glass substrate205/923, SOLAR COLLECTOR OR ABSORBER257/461, Light responsive pn junction427/74, Photoelectric427/76, Coating is selenium, tellurium, or compound thereof438/94, Heterojunction438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing438/98Contact formation (i.e., metallization)

Examiners

Primary: Weisstuch, Aaron

Attorney, Agent or Firm

International Classes

H01L 31/18 (20060101)
H01L 31/072 (20060101)
H01L 31/06 (20060101)
H01L 31/0224 (20060101)

Abstract

A stable front contact current collector grid 116 is provided for photovoltaic devices. The current collector grid 116 is disposed between two semiconductor layers, 118 and 119, each semiconductor layer having the same conductivity type. The photovoltaic device utilizes a substrate 112; an optically transparent electrically conductive layer 114; a first layer of semiconductor material 118; a front contact current collector grid 116; a second layer of semiconductor material 119 having the same conductivity type as the first semiconductor layer; a third layer of semiconductor material 120 having a conductivity type opposite from that of the first and second semiconductor layers; and an electrically conductive film 122 in contact with the third semiconductor layer.

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