Method of compensating the proximity effect in electron beam projection systems
Method of compensating the proximity effect in electron beam projection systems Patent #: 4504558
ApplicationNo. 06/603020 filed on 04/23/1984
US Classes:430/22, REGISTRATION OR LAYOUT PROCESS OTHER THAN COLOR PROOFING430/296, Electron beam imaging430/311, Making electrical device430/394, PLURAL EXPOSURE STEPS430/396EFFECTING FRONTAL RADIATION MODIFICATION DURING EXPOSURE, E,G., SCREENING, MASKING, STENCILING, ETC.
ExaminersPrimary: Kittle, John E.
Assistant: Dees, Jose G.
Attorney, Agent or Firm
International ClassesG03F 1/16 (20060101)
G03F 7/20 (20060101)
Foreign Application Priority Data1983-05-23 EP
AbstractAccording to this process two partial patterns which, if superimposed upon each other in a predetermined alignment relative to each other yield the desired pattern, with elements of both partial patterns combining to form elements of the pattern, and these partial pattern elements overlapping sectionally, are projected with a suitable radiation onto the radiation-sensitive layers. Overlapping is achieved in that when designing the two partial patterns a pattern corresponding to the desired pattern is used as a basis in that the elements of this pattern are exposed to a negative windage, the negative windage pattern is subsequently partitioned into two negative windage patterns corresponding to the partial patterns, and finally the negative windage partial pattern elements are exposed to a positive windage to the desired size of the partial pattern elements.The method is used in particular when a pattern is to be transferred by means of hole masks, and if it is necessary, e.g. because the pattern shows annular elements, to use instead of one mask only two complementary masks each comprising at least one part of the pattern.