Plasma reactor having slotted manifold
Patent 4590042 Issued on May 20, 1986. Estimated Expiration Date: 
December 24, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 24, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPlasma reactor apparatus Computer controlled system for processing semiconductor wafers Single wafer plasma etch reactor Patent #: 4534816 InventorAssigneeApplicationNo. 06/685650 filed on 12/24/1984US Classes:422/186.06, Surface is metal156/345.34, Showerhead-type204/192.32, Sputter etching204/298.33, Specified gas feed or withdrawal422/186.04, Electrostatic field or electrical discharge422/186.05Treating surface of solid substrateExaminersPrimary: Terapane, John F.Assistant: Wolffe, Susan Attorney, Agent or FirmInternational ClassH01J 37/32 (20060101)AbstractA plasma reactor apparatus is disclosed in which plates having channels are used to redistribute gas uniformly over the surface of a wafer being processed in the reactor. Slot means adjacent the plates provide a final baffle to prevent jetstreams in the gas from impinging directly on the wafer. |
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