Method of making semiconductor integrated circuits having backside gettered with phosphorus
August 21, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3740835 3811975 Elimination of stacking faults in silicon devices: a gettering process Impact sound stressing for semiconductor devices Method of gettering using backside polycrystalline silicon Reliable metal-to-junction contacts in large-scale-integrated devices Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconductor devices thus manufactured Gettering semiconductor wafers with a high energy laser beam Method of manufacturing Si gate MOS integrated circuit Structure for shallow junction MOS circuits InventorsAssigneeApplicationNo. 06/642932 filed on 08/21/1984US Classes:438/143, Gettering of semiconductor substrate257/E21.274, Deposition from gas or vapor (EPO)257/E21.318, Of silicon body, e.g., for gettering (EPO)257/E21.585, Filling of holes, grooves, vias or trenches with conductive material (EPO)257/E21.627, Interconnection or wiring or contact manufacturing related aspects (EPO)438/476By layers which are coated, contacted, or diffusedExaminersPrimary: Roy, UpendraAttorney, Agent or FirmInternational ClassesH01L 21/768 (20060101)H01L 21/02 (20060101) H01L 21/70 (20060101) H01L 21/322 (20060101) H01L 21/316 (20060101) H01L 21/8234 (20060101) AbstractFor achieving dense packing of MOS transistors at the top surface of a silicon semiconductor body, second level metallization including arsenic doped polysilicon contacts are used in conjunction with a phosphorus gettering step at a time when the top surface is sealed against the introduction of phosphorus by an undoped sacrificial glass layer, i.e., which is essentially free of phosphorus. The second level metallization is thereafter completed by coating the polysilicon with a high conductivity metal, such as aluminum. During the gettering, the polysilicon contacts are insulated from the first level metallization by a planarized glass layer doped with phosphorus to a concentration below the saturation level of phosphorus in the glass.Other References
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