Method of producing titanium nitride MOS device gate electrode
March 7, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3402081 3879746 Fabrication method for integrated circuits with polysilicon lines having low sheet resistance MIS Device having a metal and insulating layer containing at least one cation-trapping element Heterojunction type semiconductor photoelectric conversion device PN Or PIN junction type semiconductor photoelectric conversion device Manufacturing TaSi-polysilicon conductors having high-resistance elements by a liftoff technique Photovoltaic cell Patent #: 4485265 InventorsAssigneeApplicationNo. 06/472517 filed on 03/07/1983US Classes:438/586, Combined with formation of ohmic contact to semiconductor region257/412, Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)257/754, At least one layer of silicide or polycrystalline silicon257/764, Alloy containing molybdenum, titanium, or tungsten257/E21.292, Inorganic layer composed of nitride (EPO)257/E21.295, Deposition of layer comprising metal, e.g., metal, alloys, metal compounds (EPO)257/E23.163, Principal metal being refractory metal (EPO)257/E29.155, Multiple silicon layers257/E29.16, Gate conductor material being compound or alloy material (e.g., organic material, TiN, MoSi 2 ) (EPO)438/592, Possessing plural conductive layers (e.g., polycide)438/656, Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)438/680, Utilizing chemical vapor deposition (i.e., CVD)438/685, Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)438/971STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITIONExaminersPrimary: Saba, William G.Attorney, Agent or FirmInternational ClassesH01L 21/02 (20060101)H01L 29/40 (20060101) H01L 29/49 (20060101) H01L 21/3205 (20060101) H01L 23/52 (20060101) H01L 21/318 (20060101) H01L 23/532 (20060101) AbstractAn MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.Other References
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