Apparatus and method for high rate deposition and etching
Patent 4563367 Issued on January 7, 1986. Estimated Expiration Date: 
May 29, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 29, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesApparatus for the plasma treatment of semiconductors Installation for depositing thin layers in the reactive vapor phase Plasma assisted deposition system Patent #: 4439463 InventorApplicationNo. 06/614944 filed on 05/29/1984US Classes:427/563, Silicon containing coating material118/50.1, With means to apply electrical and/or radiant energy to work and/or coating material216/67, Using plasma216/79, Etching silicon containing substrate427/574, Silicon containing coating427/588, Silicon or semiconductor material containing coating438/723, Silicon oxide or glass438/724, Silicon nitride438/792Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)ExaminersPrimary: Newsome, John H.Attorney, Agent or FirmInternational ClassesC23C 16/509 (20060101)C23C 16/50 (20060101) H01J 37/32 (20060101) AbstractA system and methods for very high rate deposition and etching using a separate, substantially enclosed plasma generation chamber within a conventional semiconductor-processing vacuum chamber. A pressure differential is established between the chambers and a low frequency, high flux density, highly dissociated plasma is generated within the smaller internal chamber and projected by the pressure differential to a selected region of the processing chamber. The gas composition, flow rates, power and pressure are readily tailored to the particular etching or deposition process. In addition, the small internal chamber can be rotated and translated to expand the area of coverage. Etch rates of up to 60,000 angstroms per minute and useful quality dielectric film deposition rates of up to approximately 6,000 angstroms per minute have been achieved to date.Other References
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