ApplicationNo. 06/501332 filed on 06/06/1983
US Classes:348/275, Staggered or irregular elements257/E27.133, Photodiode array or MOS imager (EPO)348/315With staggered or irregular photosites or specified channel configuration
ExaminersPrimary: Rubinson, Gene Z.
Assistant: Brinich, Stephen
Attorney, Agent or Firm
International ClassH01L 27/146 (20060101)
AbstractA solid-state imaging sensor, which may be a color imaging sensor, having simultaneously a high resolution and high sensitivity. The horizontally extending electrodes, which are connected to be driven by outputs of a vertical shift register, are formed in a flattened zig-zag pattern with alternate ones of the horizontally extending electrodes being offset in phase from one another. Source diffusions are formed in the octagonally shaped areas thereby produced. FET switching devices are provided for each of the source diffusions for selectively coupling the source diffusions to corresponding ones of vertically extending electrodes. The source diffusions form active layers of light-sensing photodiodes.