Patent 4540843 Issued on September 10, 1985. Estimated Expiration Date: February 29, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
136/251, Encapsulated or with housing136/244, Panel or array136/255, Schottky, graded doping, plural junction or special junction geometry136/256, Contact, coating, or surface geometry136/258, Polycrystalline or amorphous semiconductor257/461Light responsive pn junction
The invention relates to a solar cell for exposure to light rays on both sides. The solar cell contains only one pn junction on one surface side of the semiconductor body. The base of the solar cell is uniformly and less strongly doped than the thin surface zone of the conduction type opposite to that of the semiconductor base. Both zones of the solar cell are in contact with a structured conduction path system on opposite surface sides.
Other References
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Harold J. Hovel, Semiconductors and Semimetals, vol. II, "Solar Cells", Academic Press, 1975, pp. 96-97; 186-189
V. J. Rao et al., "The Role of Hydrogen in Improving Photovoltaic Response of Solar Cells on Polycrystalline Silicon", Phys. Stat. Sol.(a) 72, 745 (1982)