Semiconductor memory device
Patent 4532609 Issued on July 30, 1985. Estimated Expiration Date: 
June 14, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 14, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3540010 3560764 Semiconductor memory device Patent #: 4314359 InventorAssigneeApplicationNo. 06/504125 filed on 06/14/1983US Classes:365/154, Flip-flop (electrical)257/296, Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)257/379, Combined with passive components (e.g., resistors)365/156ComplementaryExaminersPrimary: Moffitt, James W.Attorney, Agent or FirmInternational ClassG11C 11/412 (20060101)Foreign Application Priority Data1982-06-15 JPAbstractA semiconductor memory device comprises a flip-flop circuit composed of two inverters each including two series-connected resistors as load elements, the input and output terminals of one of the inverters are respectively connected to the output and input terminals of the other inverter, and two capacitors whose first terminals are connected to the junctions of the two resistors and whose second terminals are connected to the output terminals of the two inverters.Other References
| |
