Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
Surface treating apparatus utilizing plasma generated by microwave discharge
Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
Method for plasma deposition of amorphous materials
Plasma deposition apparatus
Installation for depositing thin layers in the reactive vapor phase
Multiple chamber deposition and isolation system and method Patent #: 4438723
ApplicationNo. 06/441280 filed on 11/12/1982
US Classes:118/718, Running length work118/50.1, With means to apply electrical and/or radiant energy to work and/or coating material118/719, Multizone chamber118/723AN, Having antenna118/724, By means to heat or cool136/258, Polycrystalline or amorphous semiconductor343/771, With wave guide coupling427/575Generated by microwave (i.e., 1mm to 1m)
ExaminersPrimary: Smith, John D.
Assistant: Plantz, Bernard F.
International ClassesH01L 31/18 (20060101)
C23C 16/50 (20060101)
C23C 16/511 (20060101)
H01J 37/32 (20060101)
H01L 31/20 (20060101)
AbstractAn apparatus for manufacturing photovoltaic devices of the type including a plurality of layers of semiconductor materials deposited onto a substrate includes a plurality of deposition chambers, each chamber arranged to deposit a respective one of the layers of semiconductor materials onto the substrate as the substrate is advanced therethrough. At least one of the deposition chambers is coupled to a source of microwave energy to form a microwave energy excited glow discharge plasma within the at least one deposition chamber for depositing at least one of the layers of semiconductor material onto the substrate from the microwave energy excited glow discharge plasma within the at least one deposition chamber.Also disclosed is an assembly for depositing a material onto a substrate from a microwave energy excited plasma. The assembly includes a deposition chamber, a source of microwave energy, and an antenna extending into the chamber and coupled to the microwave energy source. The antenna includes an outer sheath formed from a conductive material, an inner conductor extending within and electrically insulated from the outer sheath, and a slot within the outer sheath. The assembly also includes a new and improved feed-through for the antenna permitting the antenna to extend into the chamber while establishing a vacuum seal between the chamber and the antenna.