Procedure for fabrication of microstructures over large areas using physical replication
Patent 4512848 Issued on April 23, 1985. Estimated Expiration Date: 
February 6, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 6, 2004. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3052581 3290191 InventorsApplicationNo. 06/577174 filed on 02/06/1984US Classes:216/43, Adhesively bonding resist to substrate204/192.32, Sputter etching204/192.34, Ion beam etching (e.g., ion milling, etc.)216/49, Mask resist contains organic compound216/54, PATTERN OR DESIGN APPLIED BY TRANSFER257/E31.13Texturized surface (EPO)ExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesG02B 6/13 (20060101)G02B 6/136 (20060101) B41C 3/00 (20060101) G02B 5/18 (20060101) H01L 31/0236 (20060101) AbstractThe present invention is an improved replication process which copies a master pattern onto an intermediate transfer mask which is then used to form a lithographic mask on the surface of a substrate. A pattern derived from the original master pattern is then produced in the substrate by an etching process. |
| ||||||||||||||
