Selective plasma etching and deposition
Process and gas mixture for etching silicon dioxide and silicon nitride
Selectively etched bodies Patent #: 4344816
ApplicationNo. 06/575118 filed on 01/30/1984
US Classes:438/723, Silicon oxide or glass204/192.32, Sputter etching252/79.1, ETCHING OR BRIGHTENING COMPOSITIONS257/E21.245, Removal by chemical etching, e.g., dry etching (EPO)257/E21.252, By dry-etching (EPO)257/E21.256, By dry-etching (EPO)438/697, Planarization by etching and coating438/725Organic material (e.g., resist, etc.)
ExaminersPrimary: Powell, William A.
Attorney, Agent or Firm
International ClassesH01L 21/02 (20060101)
H01L 21/311 (20060101)
H01L 21/3105 (20060101)
AbstractA method of controlling the etch rate ratio of SiO2 /photoresist (PR) in a quartz planarization etch back process involves etching with a gaseous mixture containing CF4 and either CHF3 or Cx Fy with x>1 or O2. The preferred SiO2 /PR ratio of 1.2b1;0.1 is obtained by either adding CHF3 to decrease the etch rate of the PR or by adding O2 to increase the etch rate of the PR.