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Patterning of polyimide films with ultraviolet light

Patent 4508749 Issued on April 2, 1985. Estimated Expiration Date: Icon_subject December 27, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Method for improving the surface of plastic materials Patent #: 4247496
Issued on: 01/27/1981
Inventor: Kawakami ,   et al.

Inventors

Application

No. 06/565566 filed on 12/27/1983

US Classes:

427/555, Nonuniform or patterned coating216/58, GAS PHASE ETCHING OF SUBSTRATE216/65, Using laser219/121.85, Method257/759, Including organic insulating material between metal levels257/E21.25, Etching inorganic layer (EPO)257/E21.256, By dry-etching (EPO)257/E21.578, Tapered via holes (EPO)427/97.2, Coating hole wall427/97.5, Polymer deposited430/315, Material deposition only430/945LASER BEAM

Examiners

Primary: Lusignan, Michael R.

Attorney, Agent or Firm

International Classes

B23K 26/06 (20060101)
B23K 26/40 (20060101)
B23K 26/00 (20060101)
G03F 7/039 (20060101)
H01L 21/02 (20060101)
H01L 21/768 (20060101)
H01L 21/70 (20060101)
H01L 21/311 (20060101)
H05K 3/00 (20060101)
H05K 3/46 (20060101)

Abstract

A method for etching a polyimide body which involves directing U.V. radiation having a wavelength between about 240 to 400 nm. onto the body is described. The radiation is continued to be applied to the body for sufficient time to cause a direct etching of the body where the radiation impinges upon the body. The method is particularly useful where the U.V. radiation is passed through a mask located between the source of the ultraviolet radiation and the body so that a radiation pattern is projected onto the body where the direct etching takes place. The etching can be caused to produce openings having a positive slope in the radiation pattern upon the polyimide layer. The advantage of the positive slope is particularly great where a coating such as a metal layer is deposited over the remaining polyimide layer having the openings therein. The positive slope allows the complete filling of the openings.

Other References

  • Koren et al., In GaAsP/InP Under Cut Mesa Laser with Planar Polyimide Passivation, App. Phys. Lett. 42(5), Mar. 1, 1983
  • Raffel et al., Laser-Formed Connections Using Polyimide, App. Phys. Lett. 42(8), Apr. 15, 1983
  • Andrew et al., Direct Etching of Polymeric Materials Using a Xe Cl Laser, App. Phys. Lett. 43(8), Oct. 15, 1983
  • "Effective Deep Ultraviolet Photoetching of Polymethyl Methacrylate by an Excimer Laser", by Y. Kawamura et al., in Appl. Phys. Lett. 40(5) Mar. 1, 1982, pp. 374-375
  • "Direct Etching of Resists by U.V. Light" by N. Ueno, et al., Ja. J of App. Phys, vol. 20, No. 10, Oct. 1981, pp. L709-712
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