Pressure-applied type semiconductor device
Patent 4500907 Issued on February 19, 1985. Estimated Expiration Date: 
September 17, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 17, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3434017 3452254 3548267 3890637 InventorsAssigneeApplicationNo. 06/419477 filed on 09/17/1982US Classes:257/785, By pressure alone257/773, Of specified configuration257/E21.505, Insulative mounting semiconductor device on support (EPO)257/E23.026, Bases or plates or solder therefor (EPO)257/E23.078Flexible arrangements, e.g., pressure contacts without soldering (EPO)ExaminersPrimary: James, Andrew J.Assistant: Clark, S. V. Attorney, Agent or FirmInternational ClassesH01L 21/02 (20060101)H01L 21/58 (20060101) H01L 23/492 (20060101) H01L 23/48 (20060101) Foreign Application Priority Data1981-10-23 JPAbstractA pressure-applied type semiconductor device, in which a metal stamp for urging a semiconductor body is formed with a peripheral annular groove. When pressure is applied, the groove is elastically deformed. Thus, stress concentration in the semiconductor body directly under the edge of the metal stamp can be alleviated.Other References
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