Three-mirror active-passive semiconductor laser
Patent 4488307 Issued on December 11, 1984. Estimated Expiration Date: 
June 7, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 7, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesHeterostructure devices including tapered optical couplers Multi-hetero-structure waveguide type optical integrated circuitry Optical integrated circuit including junction laser with oblique mirror Heterostructure lasers with combination active strip and passive waveguide strip Patent #: 4371966 InventorsApplicationNo. 06/385739 filed on 06/07/1982US Classes:372/50.23, Having lens372/45.01, Particular confinement layer385/49Fiber to thin film devicesExaminersPrimary: Davie, James W.Attorney, Agent or FirmInternational ClassesH01S 5/20 (20060101)H01S 5/00 (20060101) AbstractDisclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely-spaced dual mode operation, and narrow-band multimode operation.Other References
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