U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Apparatus and method for manufacturing tape-shaped silicon bodies for solar cells

Patent 4481235 Issued on November 6, 1984. Estimated Expiration Date: Icon_subject September 13, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3491675

Cold substrate growth technique for silicon-on-ceramic
Patent #: 4251570
Issued on: 02/17/1981
Inventor: Zook

Growth technique for silicon-on-ceramic
Patent #: 4252861
Issued on: 02/24/1981
Inventor: Heaps ,   et al.

Methods of and apparatus for coating lightguide fiber Patent #: 4409263
Issued on: 10/11/1983
Inventor: Aloisio, Jr. ,   et al.

Inventors

Assignee

Application

No. 06/531678 filed on 09/13/1983

US Classes:

427/74, Photoelectric118/401, Capillary passages or barometric column feed118/405, Running length work118/420, Strand form work118/423, With means for moving work through, into or out of pool118/429, With tank structure, liquid supply, control, and/or nonradiant heating means136/258, Polycrystalline or amorphous semiconductor427/209, APPLICATION TO OPPOSITE SIDES OF SHEET, WEB, OR STRIP (EXCLUDING PROCESSES WHERE ALL COATING IS BY IMMERSION)427/210, Nonuniform coating427/256, NONUNIFORM COATING427/434.7, Extending through bath-containing wall427/443.2, Inorganic base427/75Mosaic or nonuniform coating

Examiners

Primary: Morgenstern, Norman
Assistant: Steinberger, Robert J. Jr.

Attorney, Agent or Firm

International Classes

C30B 15/00 (20060101)
C30B 15/08 (20060101)
B05C 9/04 (20060101)
B05C 9/00 (20060101)

Foreign Application Priority Data

1982-10-29 DE

Abstract

A method and apparatus for manufacturing tape-shaped silicon bodies for solar cells wherein a tape-shaped reticulate carrier is passed vertically downwardly through a drawing nozzle including a slot which is full of molten silicon. The drawing nozzle is located above the level of molten silicon in a vat containing such molten silicon, and capillary means are provided to deliver the molten silicon from the vat into the drawing nozzle to fill the same with the molten silicon.

Other References

  • Belouet "The Growth of Polysilicon Sheets on Carbon Substrates by the RAD Process", Abstract No. 327, (1980)
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