Self-compensating hydrostatic flattening of semiconductor substrates
Patent 4470856 Issued on September 11, 1984. Estimated Expiration Date: 
February 7, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 7, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3229224 3510374 3573455 3802065 3843401 Method for manufacturing a semiconductor device Patent #: 4156963 InventorsAssigneeApplicationNo. 06/464442 filed on 02/07/1983US Classes:156/64, With measuring, testing, or inspecting156/378, With testing, measuring, and/or indicating means257/E21.214, To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO)257/E31.118, For device having potential or surface barrier (EPO)438/692, Simultaneous (e.g., chemical-mechanical polishing, etc.)438/7Optical characteristic sensedExaminersPrimary: Dawson, Robert A.Attorney, Agent or FirmInternational ClassesH01L 31/0203 (20060101)G01B 11/26 (20060101) H01L 21/302 (20060101) H01L 21/02 (20060101) AbstractA semiconductive substrate, such as a silicon wafer, is mounted on a baseplate for inclusion in an optical device such as a liquid crystal light valve. An optical flat presses the top surface of silicon wafer toward the baseplate and against an O-ring seal surrounding a fluid adhesive. The fluid adhesive hydrostatically distributes the force of compression to guarantee optical flatness and self-compensation for the amount fluid adhesive surrounded by the O-ring. The optical flatness of the semiconductor substrate is limited only by the flatness of the optical flat against which it is compressed. Parallel alignment of the optical flat, the substrate and the baseplate is achieved by reflecting a laser beam through the semiconductive substrate and observing the interference fringes therein, while adjusting the relative alignment so as to maximize the distance between fringes.Other References
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