Tunable CW semiconductor platelet laser
Patent 4462103 Issued on July 24, 1984. Estimated Expiration Date: 
March 23, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 23, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3568087 3679994 Tunable laser systems and method Mode-locked cavity-dumped laser Laser apparatus Higher power semiconductor radiating mirror laser Apparatus for producing tunable intense coherent radiation in the vicinity 628 cm.-1 Mode-locked laser using a saturable absorber in a cavity Patent #: 4268801 InventorsAssigneeApplicationNo. 06/361021 filed on 03/23/1982US Classes:372/35, Liquid coolant372/20, Tuning372/43.01SemiconductorExaminersPrimary: Davie, James W.Attorney, Agent or FirmInternational ClassesH01S 5/022 (20060101)H01S 5/00 (20060101) H01S 5/024 (20060101) H01S 3/094 (20060101) H01S 5/14 (20060101) AbstractA tunable CW semiconductor platelet laser having an optical pump source and an external resonant cavity. The resonant cavity is bounded by a pair of spaced-apart reflective elements and has a prism therein. One of the reflective elements is partially transmissive and rotatable about its vertical axis. The semiconductor platelet is mounted upon the other reflective element and both are mounted within a temperature controlled, vacuum environment while being capable of being moved in three dimensions. The prism located within the resonant cavity aids in laser tuning upon rotation of the partially transmissive reflective element.Other References
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