Method of plasma etching of films containing chromium
Patent 4445966 Issued on May 1, 1984. Estimated Expiration Date: 
June 20, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 20, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess and material for semiconductor photomask fabrication Method of plasma etching Etch process for chromium Glow discharge etching process for chromium Patent #: 4229247 InventorsAssigneeApplicationNo. 06/505624 filed on 06/20/1983US Classes:438/714, Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)204/192.32, Sputter etching216/75, Substrate contains elemental metal, alloy thereof, or metal compound252/79.1, ETCHING OR BRIGHTENING COMPOSITIONS257/E21.311, Using plasma (EPO)257/E21.312, Of silicon-containing layer (EPO)438/715, With substrate heating or cooling438/721SilicideExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesH01L 21/3213 (20060101)H01L 21/02 (20060101) AbstractA method of etching a thin film containing chromium using fluorine or a fluorine containing compound without leaving an electrically conductive residue is described. |
| ||||||||||||||
