Method for making thin film cadmium telluride and related semiconductors for solar cells
Patent 4445965 Issued on May 1, 1984. Estimated Expiration Date: 
June 14, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 14, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for making III-V devices Method for making semiconductors for solar cells Methods and apparatus for producing unsupported monocrystalline films of silicon and of other materials Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer Patent #: 4255208 InventorAssigneeApplicationNo. 06/387961 filed on 06/14/1982US Classes:438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing117/101, Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index)117/106, With pretreatment or preparation of a base (e.g., annealing)117/109, Fully-sealed or vacuum-maintained chamber (e.g., ampoule)117/84, FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)117/915, SEPARATING FROM SUBSTRATE117/928, SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02}117/956, {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46}117/958, Cadmium sulfide containing (e.g., ZnCdS) {C30B 29/50}136/260, Cadmium containing204/192.25, Semiconductor257/E21.461, Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO)257/E21.462, Using physical deposition, e.g., vacuum deposition, sputtering (EPO)257/E21.463, Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)257/E21.485, Chemical or electrical treatment, e.g., electrolytic etching (EPO)257/E31.016, For device having potential or surface barrier (EPO)430/314, Etching of substrate and material deposition438/507, Fluid growth from gaseous state combined with subsequent diverse operation438/940LASER ABLATIVE MATERIAL REMOVALExaminersPrimary: Bernstein, Hiram H.Attorney, Agent or FirmInternational ClassesH01L 31/0264 (20060101)C30B 25/02 (20060101) C30B 33/00 (20060101) C30B 23/02 (20060101) H01L 21/36 (20060101) H01L 21/465 (20060101) H01L 21/363 (20060101) H01L 21/365 (20060101) H01L 21/02 (20060101) H01L 31/0296 (20060101) AbstractA thin cadmium-telluride semiconductor film for use in solar cells is grown epitaxially on a second semiconductor film, typically tellurium, which may be epitaxial on a substrate semiconductor, typically single-crystal cadmium-telluride. The second semiconductor has a lower resistance to layered cleaving than the desired semiconductor. Application of a strain to the sandwich causes the desired thin CdTe layer to peel off by fracture along the plane of the second semiconductor.Other References
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