Process of making a filament-type memory semiconductor device
Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
Method of fabrication of an amorphous semiconductor device on a substrate
PROM electrically written by solid phase epitaxy
Method for constructing devices with a storage action and having amorphous semiconductors Patent #: 4366614
ApplicationNo. 06/251106 filed on 04/06/1981
US Classes:257/2, Bulk effect switching in amorphous material257/3, With means to localize region of conduction (e.g., "pore" structure)257/928, WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION257/E45.002Bistable switching devices, e.g., Ovshinsky-effect devices (EPO)
ExaminersPrimary: Larkins, William D.
Attorney, Agent or Firm
International ClassH01L 45/00 (20060101)
AbstractA residual crystallization retardation layer is provided between the non-crystalline switchable semiconductor layer and each electrode structure. Amorphous germanium, silicon or carbon form good crystallization retardation layers and also minimize electromigration and reduce solubility of tellurium in the electrodes.