Amorphous switching device with residual crystallization retardation
Patent 4433342 Issued on February 21, 1984. Estimated Expiration Date: 
April 6, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 6, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3432729 3588639 3611063 3877049 3918032 Process of making a filament-type memory semiconductor device Amorphous semiconductor memory device for employment in an electrically alterable read-only memory Method of fabrication of an amorphous semiconductor device on a substrate PROM electrically written by solid phase epitaxy Method for constructing devices with a storage action and having amorphous semiconductors Patent #: 4366614 InventorsAssigneeApplicationNo. 06/251106 filed on 04/06/1981US Classes:257/2, Bulk effect switching in amorphous material257/3, With means to localize region of conduction (e.g., "pore" structure)257/928, WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION257/E45.002Bistable switching devices, e.g., Ovshinsky-effect devices (EPO)ExaminersPrimary: Larkins, William D.Attorney, Agent or FirmInternational ClassH01L 45/00 (20060101)AbstractA residual crystallization retardation layer is provided between the non-crystalline switchable semiconductor layer and each electrode structure. Amorphous germanium, silicon or carbon form good crystallization retardation layers and also minimize electromigration and reduce solubility of tellurium in the electrodes.Other References
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