High rate magnetron sputtering of high permeability materials

Patent 4431505 Issued on February 14, 1984. Estimated Expiration Date:

June 29, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Magnetically enhanced sputtering device
Patent #: 4265729
Issued on: 05/05/1981
Inventor: Morrison, Jr.

Penning sputter source
Patent #: 4282083
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Issued on: 10/26/1982
Inventor: McKelvey

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Patent #: 4361472
Issued on: 11/30/1982
Inventor: Morrison, Jr.

Target assembly comprising, for use in a magnetron-type sputtering device, a magnetic target plate and permanent magnet pieces
Patent #: 4370217
Issued on: 01/25/1983
Inventor: Funaki

High rate magnetron sputtering of high permeability materials
Patent #: 4391697
Issued on: 07/05/1983
Inventor: Morrison, Jr.

Magnetron cathode sputtering apparatus
Patent #: 4394236
Issued on: 07/19/1983
Inventor: Robinson

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Issued on: 07/19/1983
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Inventor

Morrison, Jr., Charles F.

Assignee

Vac-Tec Systems, Inc.

Application

No. 06/508927 filed on 06/29/1983

US Classes:

204/298.19, Planar magnetron204/192.15, Specified deposition material or use204/298.16Magnetically enhanced

Examiners

Primary: Demers, Arthur P.

Attorney, Agent or Firm

International Classes

H01J 37/34 (20060101)
H01J 37/32 (20060101)

Foreign Application Priority Data

1983-05-03 FR

Abstract

A magnetron sputtering apparatus for high permeable materials where the target may include first and second elements separated from one another by a gap and the magnetic field source preferably exceeds 1000 gauss adjacent a pole thereof. The source is preferably a solid, oriented crystal ferrite magnet. A number of different configurations are disclosed.