Process for improving nitride deposition on a semiconductor wafer

Patent 4428975 Issued on January 31, 1984. Estimated Expiration Date:

January 28, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Deposition of silicon nitride
Patent #: 4279947
Issued on: 07/21/1981
Inventor: Goldman , et al.

Boat for carrying semiconductor substrates Patent #: 4389967
Issued on: 06/28/1983
Inventor: Shimoda , et al.

Inventors

Assignee

Motorola, Inc.

Application

No. 06/461715 filed on 01/28/1983

US Classes:

438/791Silicon nitride formation

Examiners

Primary: Smith, John D.

Attorney, Agent or Firm

Clingan, Jr.; James L.

International Classes

C23C 16/44 (20060101)
C23C 16/34 (20060101)

Abstract

In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminated by using a quartz tube which has an inside surface coated with polysilicon for the nitride deposition.

Other References

Bronchard et al., "Method for Eliminating Contamination by Si₃ N₄ and/or SiO₂ Particles in Chemical Deposition Equipment", IBM TDB, vol. 22, No. 5, Oct. 1979, p. 1886