ApplicationNo. 06/461715 filed on 01/28/1983
US Classes:438/791Silicon nitride formation
ExaminersPrimary: Smith, John D.
Attorney, Agent or Firm
International ClassesC23C 16/44 (20060101)
C23C 16/34 (20060101)
AbstractIn a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminated by using a quartz tube which has an inside surface coated with polysilicon for the nitride deposition.