Apparatus and process for sputter deposition of reacted thin films
Patent 4420385 Issued on December 13, 1983. Estimated Expiration Date: 
April 15, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 15, 2003. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3620956 3773639 3822200 3890217 3892650 Process for the surface oxidisation of aluminum Sputtered dielectric thin films Apparatus for concurrently sputtering different materials Method for coating a substrate Composite sputtering method InventorAssigneeApplicationNo. 06/485556 filed on 04/15/1983US Classes:204/192.23, Silicon containing204/192.15, Specified deposition material or use204/192.2, Ferromagnetic204/298.07, Specified gas feed or withdrawal204/298.26Plural diverse treatment stations, zones, or coating material source within single chamberExaminersPrimary: Demers, Arthur P.Attorney, Agent or FirmInternational ClassesC23C 14/00 (20060101)H01J 37/34 (20060101) H01J 37/32 (20060101) C23C 14/56 (20060101) C23C 14/58 (20060101) C23C 14/34 (20060101) AbstractA method and apparatus for forming a thin film on a substrate by sputtering of a material from a cathode, which material is subsequently reacted to form the thin film. A process chamber has a sputter zone which contains a sputter electrode assembly and in which an inert sputtering atmosphere is injected. Isolation means separates the sputtering zone from a reaction zone of the process chamber, into which a chemically reactive atmosphere is injected, and prevents the chemically reactive atmosphere from entering the sputtering zone. A substrate receives a sputtered material in the sputtering zone, and is subsequently transferred to the reaction zone where the sputtered material is contacted by and reacts with the chemically reactive atmosphere therein to form a reacted thin film.Other References
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