High-insulation multi-layer device formed on a metal substrate

Patent 4420364 Issued on December 13, 1983. Estimated Expiration Date:

May 19, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

3152938

3688396

Mounting integrated circuit elements Patent #: 3947957
Issued on: 04/06/1976
Inventor:

Inventors

Application

No. 06/379722 filed on 05/19/1982

US Classes:

216/20, Adhesive or autogenous bonding of self-sustaining preforms (e.g., prefabricated base, etc.)174/257, Conducting (e.g., ink)174/258, Insulating174/259, Adhesive/bonding216/17, Forming or treating of groove or through hole216/36, Removing at least one of the self-sustaining preforms or a portion thereof257/E21.259, Organic layers, e.g., photoresist (EPO)257/E23.006, Metallic substrates having insulating layers (EPO)257/E23.169, Interconnection structure between plurality of semiconductor chips being formed on or in insulating substrates (EPO)29/846Manufacturing circuit on or in base

Examiners

Primary: Powell, William A.

Attorney, Agent or Firm

Birch, Stewart, Kolasch & Birch

International Classes

H05K 3/46 (20060101)
H01L 23/538 (20060101)
H01L 23/14 (20060101)
H01L 21/02 (20060101)
H01L 21/48 (20060101)
H01L 21/312 (20060101)
H01L 23/52 (20060101)
H01L 23/12 (20060101)
H05K 3/20 (20060101)

Foreign Application Priority Data

1976-11-02 JP

Abstract

A high-insulation adhesive sheet is formed on a metal substrate. Bottom conductors are formed on the high-insulation adhesive sheet. A high-insulation organic layer is formed on the high-insulation adhesive sheet and the bottom conductors, and top conductors are formed thereon. The high-insulation organic layer is tightly attached to the metal substrate via the high-insulation adhesive sheet. The bottom conductors and the top conductors are communicated to each other via through holes formed in the high-voltage organic layer.