Coated cemented carbide product
Abrasive compact brazed to a backing
Method of making molten silicon infiltration reaction products and products made thereby
Polycrystalline diamond body
Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
Process for preparing a polycrystalline diamond body
Process for preparing a silicon-bonded polycrystalline diamond body
Process for preparing a polycrystalline diamond body/silicon carbide substrate composite
ApplicationNo. 06/312987 filed on 10/20/1981
US Classes:51/307, WITH INORGANIC MATERIAL264/101, VACUUM TREATMENT OF WORK264/345, By a temperature change264/654, Including diverse heating of article prior to outside-mold sintering or vitrifying264/656, Including nonsintering burn-off, volatilization, or melting of binder51/308Clay, silica, or silicate
ExaminersPrimary: Czaja, Donald E.
Assistant: Thompson, W.
Attorney, Agent or Firm
International ClassesB01J 3/06 (20060101)
B24D 3/04 (20060101)
B24D 3/06 (20060101)
C04B 35/573 (20060101)
C04B 35/565 (20060101)
AbstractA process for producing a sintered silicon carbide composite includes the steps of forming a first dispersion of diamond crystals and carbon black in paraffin, as well as forming a second dispersion of carbon fiber, carbon black and filler in paraffin. The two dispersions are compacted together to form an integral bi-layer composite which is then subjected to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of the paraffin. Silicon is heated to cause liquification and direct infiltration into both layers of the composite after which the composite is sintered under conditions sufficient to produce a ଲ-silicon carbide binder uniting the composite.
Field of SearchWITH INORGANIC MATERIAL