U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Process for production of silicon carbide composite

Patent 4417906 Issued on November 29, 1983. Estimated Expiration Date: Icon_subject October 20, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

2938807

3816081

Coated cemented carbide product
Patent #: 4018631
Issued on: 04/19/1977
Inventor: Hale

Abrasive compact brazed to a backing
Patent #: 4063909
Issued on: 12/20/1977
Inventor: Mitchell

Method of making molten silicon infiltration reaction products and products made thereby
Patent #: 4120731
Issued on: 10/17/1978
Inventor: Hillig ,   et al.

Polycrystalline diamond body
Patent #: 4124401
Issued on: 11/07/1978
Inventor: Lee ,   et al.

Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
Patent #: 4151686
Issued on: 05/01/1979
Inventor: Lee ,   et al.

Process for preparing a polycrystalline diamond body
Patent #: 4167399
Issued on: 09/11/1979
Inventor: Lee ,   et al.

Process for preparing a silicon-bonded polycrystalline diamond body
Patent #: 4168957
Issued on: 09/25/1979
Inventor: Lee ,   et al.

Process for preparing a polycrystalline diamond body/silicon carbide substrate composite
Patent #: 4171339
Issued on: 10/16/1979
Inventor: Lee ,   et al.

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Inventor

Application

No. 06/312987 filed on 10/20/1981

US Classes:

51/307, WITH INORGANIC MATERIAL264/101, VACUUM TREATMENT OF WORK264/345, By a temperature change264/654, Including diverse heating of article prior to outside-mold sintering or vitrifying264/656, Including nonsintering burn-off, volatilization, or melting of binder51/308Clay, silica, or silicate

Examiners

Primary: Czaja, Donald E.
Assistant: Thompson, W.

Attorney, Agent or Firm

International Classes

B01J 3/06 (20060101)
B24D 3/04 (20060101)
B24D 3/06 (20060101)
C04B 35/573 (20060101)
C04B 35/565 (20060101)

Abstract

A process for producing a sintered silicon carbide composite includes the steps of forming a first dispersion of diamond crystals and carbon black in paraffin, as well as forming a second dispersion of carbon fiber, carbon black and filler in paraffin. The two dispersions are compacted together to form an integral bi-layer composite which is then subjected to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of the paraffin. Silicon is heated to cause liquification and direct infiltration into both layers of the composite after which the composite is sintered under conditions sufficient to produce a ଲ-silicon carbide binder uniting the composite.

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