Thin film deposition by sputtering
September 30, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3530057 3878085 Planar magnetron sputtering method and apparatus Sputtering apparatus and methods using a magnetic field Device for cathodic sputtering at a high deposition rate Sputtering process and apparatus Planar magnetron sputtering device Cathode for sputtering Method and apparatus for producing a variable intensity pattern of sputtering material on a substrate Patent #: 4303489 InventorsAssigneeApplicationNo. 06/431957 filed on 09/30/1982US Classes:204/298.26, Plural diverse treatment stations, zones, or coating material source within single chamber204/192.15, Specified deposition material or use204/298.08, Specified power supply or matching network204/298.12, Specified target particulars204/298.13, Target composition204/298.19Planar magnetronExaminersPrimary: Demers, Arthur P.Attorney, Agent or FirmInternational ClassesC23C 14/35 (20060101)H01J 37/34 (20060101) H01J 37/32 (20060101) AbstractThe deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating. |
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