Method for performing growth of compound thin films
Patent 4413022 Issued on November 1, 1983. Estimated Expiration Date: 
November 1, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
November 1, 2000. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3218203 3224913 3602192 3721583 Method of making a composite coating Vapor deposition apparatus Continuous chemical vapor deposition reactor Method for producing compound thin films Patent #: 4058430 InventorsAssigneeApplicationNo. 06/050606 filed on 06/21/1979US Classes:117/89, Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)117/93, With significant flow manipulation or condition, other than merely specifying the components or their sequence or both117/944, Oxygen compound containing (e.g., yttria stabilized zirconia) {C30B 29/16}117/950, Aluminum containing (e.g., AL2O3, ruby, corundum, sapphire, chrysoberyl) {C30B 29/20}117/956, {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46}427/255.7, Plural coatings applied by vapor, gas, or smoke427/419.1, Metallic compound-containing coating427/419.2, Oxide-containing coating427/419.3, Superposed diverse oxide coatings427/419.7Boride, carbide, nitride, phosphide, silicide, or sulfide-containing coatingExaminersPrimary: Childs, Sadie L.Attorney, Agent or FirmInternational ClassesC23C 16/455 (20060101)C30B 25/02 (20060101) C23C 16/30 (20060101) C23C 16/40 (20060101) C23C 16/44 (20060101) Foreign Application Priority Data1979-02-28 FIAbstractA method and an apparatus are provided for performing growth of compound thin films by alternately repeating separate surface reactions of the substances comprising the compound. A carrier gas affects a diffusion barrier between the surface reaction steps to be separated from each other. The gas phase diffusion barrier is also applied to separate the source regions of different reacting vapors both from each other and from the surface reaction zone.Field of SearchBase supplied constituentPlural coatings applied by vapor, gas, or smoke Metallic compound-containing coating COATING BY VAPOR, GAS, OR SMOKE Metal coating Moving the base BASE SUPPLIED CONSTITUENT Oxide-containing coating Boride, carbide, nitride, phosphide, silicide, or sulfide-containing coating | |
