Method of forming patterns
Patent 4403151 Issued on September 6, 1983. Estimated Expiration Date: 
April 2, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 2, 2001. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesElectron beam lithography process Process and apparatus for making fine-scale patterns Patent #: 4298803 InventorsAssigneeApplicationNo. 06/250217 filed on 04/02/1981US Classes:250/492.2, Irradiation of semiconductor devices430/296, Electron beam imaging430/326, Pattern elevated in radiation unexposed areas430/330, Including heating430/942ELECTRON BEAMExaminersPrimary: Anderson, Bruce C.Assistant: Berman, Jack I. Attorney, Agent or FirmInternational ClassesG03F 7/20 (20060101)G03F 7/039 (20060101) H05K 3/06 (20060101) H05K 3/00 (20060101) Foreign Application Priority Data1980-04-02 JPAbstractDesired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.Field of SearchIrradiation of semiconductor devices |
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