Electron beam lithography process
Process and apparatus for making fine-scale patterns Patent #: 4298803
ApplicationNo. 06/250217 filed on 04/02/1981
US Classes:250/492.2, Irradiation of semiconductor devices430/296, Electron beam imaging430/326, Pattern elevated in radiation unexposed areas430/330, Including heating430/942ELECTRON BEAM
ExaminersPrimary: Anderson, Bruce C.
Assistant: Berman, Jack I.
Attorney, Agent or Firm
International ClassesG03F 7/20 (20060101)
G03F 7/039 (20060101)
H05K 3/06 (20060101)
H05K 3/00 (20060101)
Foreign Application Priority Data1980-04-02 JP
AbstractDesired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.
Field of SearchIrradiation of semiconductor devices