Photo-voltaic power generating means and methods
Patent 4400244 Issued on August 23, 1983. Estimated Expiration Date: 
April 8, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 8, 2002. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3051636 3290175 3419484 3492167 3568306 3573177 Photo-electrochemical cell containing chalcogenide redox couple and having storage capability Patent #: 4064326 InventorsAssigneeApplicationNo. 06/367723 filed on 04/08/1982US Classes:205/50, PRODUCT PRODUCED BY ELECTROLYSIS INVOLVING ELECTROLYTIC MARKING, BATTERY ELECTRODE ACTIVE MATERIAL FORMING, ELECTROFORMING, OR ELECTROLYTIC COATING136/260, Cadmium containing136/264, Selenium or tellurium containing205/170, Forming multiple superposed electrolytic coatings205/188, Forming nonelectrolytic coating before forming nonmetal electrolytic coating205/189, Predominantly titanium, vanadium, zirconium, niobium, hafnium, or tantalum nonelectrolytic coating205/316, Forming nonmetal coating205/333, Oxide-containing coating (e.g., lead dioxide, etc.)257/E21.464Using liquid deposition (EPO)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 31/06 (20060101)H01L 31/18 (20060101) H01L 21/02 (20060101) H01L 21/368 (20060101) H01L 31/068 (20060101) AbstractA photo-voltaic power cell based on a photoelectric semiconductor compound and the method of using and making the same. The semiconductor compound in the photo-voltaic power cell of the present invention can be electrolytically formed at a cathode in an electrolytic solution by causing discharge or decomposition of ions or molecules of a non-metallic component with deposition of the non-metallic component on the cathode and simultaneously providing ions of a metal component which discharge and combine with the non-metallic component at the cathode thereby forming the semiconductor compound film material thereon. By stoichiometrically adjusting the amounts of the components, or otherwise by introducing dopants into the desired amounts, an N-type layer can be formed and thereafter a P-type layer can be formed with a junction therebetween. The invention is effective in producing homojunction semiconductor materials and heterojunction semiconductor materials. The present invention also provides a method of using three electrodes in order to form the semiconductor compound material on one of these electrodes. Various examples are given for manufacturing different photo-voltaic cells in accordance with the present invention.Other References
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